Fundamentals of Electronics 1 - Pierre Muret

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Résumé :

Preface ix

Introduction xiii

Chapter 1 Diodes and Applications 1

1.1 Semiconductor physics and current transport in pn diodes 1

1.1.1 Energy and concentration of mobile charge carriers (electrons and holes) 1

1.1.2 Conduction mechanisms 6

1.2 Simplified models of the pn diode 9

1.3 Diode circuitry (reviewed in exercises) 9

1.4 Detailed model of pn diode: variable conditions and effect of temperature 10

1.4.1 Junction at equilibrium (at zero voltage or in open circuit): diffusion potential 10

1.4.2 Biased junction (or out of equilibrium): effect of an external potential difference 13

1.4.3 Effects of temperature 17

1.4.4 Capacitive effects 19

1.5 Different types of diode and their functions 23

1.5.1 Zener diode 23

1.5.2 Schottky diode or metal-semiconductor diode 23

1.5.3 Light emitting diodes and laser diodes 25

1.5.4 Photodiodes and photovoltaic generators 25

1.6 Exercises 27

1.6.1 Analyze the operation of the following circuits for a sinusoidal voltage generator and ideal diodes (a) with no threshold and (b) with a threshold U₀ 27

1.6.2 Study of the current variations in a forward biased pn diode under influence of temperatures 30

1.6.3 Analog switch 32

1.6.4 Ring modulator 35

1.6.5 Switching diode: study on opening 37

Chapter 2 Bipolar Junction Transistors and Applications 41

2.1 The transistor effect 41

2.2 Bipolar junction transistor (or BJT) models and types 44

2.2.1 Ebers-Moll model 44

2.2.2 The heterojunction bipolar transistor (or HBT) and transistors based on III-V semiconductors 48

2.3 Bipolar junction transistor in static regimes and applications of the exponential characteristic I_C (V_BE) 49

2.3.1 Equivalent circuits for the three operating regimes 49

2.3.2 Nonlinear applications: differential pairs and multiplier 50

2.3.3 Circuits for transistor bias: current sources and current mirrors 53

2.3.4 Voltage limitations 55

2.4 Small-signal dynamic circuits (linear approximation) 56

2.4.1 Basic circuits 56

2.4.2 Small-signal high-frequency equivalent circuit 62

2.5 Power amplification: classes of amplification 63

2.6 Bipolar transistor switching on resistive loads 65

2.7 Components based on the pnpn structure 67

2.7.1 pnpn diode (or Shockley diode) 67

2.7.2 Controlled rectifier or thyristor 70

2.7.3 Diacs and triacs 71

2.8 Phototransistors and optically controlled components 73

2.9 Exercises 74

2.9.1 Class A amplification 74

2.9.2 4 Quadrant multiplier 78

2.9.3 Amplifiers with rest current zero or low relative to nominal current 84

2.9.4 Cascode circuit and frequency responses of transistor amplifiers 89

Chapter 3 Field Effect Transistors and Applications 95

3.1 Operating principle of junction field effect transistors (JFET and MESFET types) 95

3.2 Metal oxide semiconductor field effect transistors 100

3.3 Types of field effect transistors and equivalent circuits 104

3.3.1 JFETs, MESFETs and MOSFETs 104

3.3.2 Other field effect transistors 106

3.4 Applications of field effect transistors 109

3.4.1 Source of current and JFET biasing 109

3.4.2 Amplifiers and mixers 110

3.4.3 Variable resistance controlled by the gate-source voltage and JFET analog switch 111

3.4.4 Switching circuits and CMOS elementary logic gates (with complementary MOSFET) 112

3.4.5 Combinatorial logic functions 114

3.4.6 Sequential logic functions 126

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Biographie:
Pierre Muret, Universit??Grenobles-Alpes, France.

Sommaire:

Pierre Muret is Emeritus Professor at Universit? Grenoble-Alpes and was until recently a researcher in materials for electronics at the Institut N?EL of the CNRS in Grenoble, France.