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Présentation Semiconductor Interfaces At The Sub - Nanometer Scale Format Relié
- Livre Littérature Générale
Sommaire:
I. Epitaxial Growth of Semiconductors.- Surface Atomic Processes during Epitaxial Growth.- Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors.- Surface Chemistry in the Si/Ge GSMBE System Studied Using RHEED.- Diffusion of Si in ?-Doped GaAs Studied by Magneto Transport.- Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status.- A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy.- The Role of Surface Reconstructions in MBE Growth of GaAs.- A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice.- Resonant Tunnelling via the Bound States of Shallow Donors.- II. Electronic Properties of Semiconductor Interfaces.- Engineering of Semiconductor Heterostructures by Ultrathin Control Layers.- Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructures.- Dipole Layers at GaAs Heterojunctions and Their Investigation.- Clustering and Correlations on GaAs-Metal Interface.- III. Atomic Scale Analysis of Semiconductor Interfaces.- Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces.- Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level.- Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping.- IV. Group IV Materials.- Group IV Strained Layer Systems.- MISFIT Accommodation during Heteroepitaxial Growth.- Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEED.- Optical Properties of Imperfect Si-Ge Heterostructures.- Si1-x-yGexCy Growthand Properties of the Ternary System.- Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy.- V. Nanometer Scale Devices.- Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures.- Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs Heterostructures Grown on Non-(100)-Oriented Substrates?.- Strained Layer Quantum Well Semiconductor Lasers.- List of Participants.
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