Fundamentals of Microelectronics - Behzad Razavi

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Auteur(s) : Behzad Razavi

Editeur : John Wiley & Sons Inc

Langue : Anglais

Parution : 01/06/2021

Format : Moyen, de 350g à 1kg

Nombre de pages : 960

Expédition : 1690

Dimensions : 25.3 x 20.4 x 3.6

ISBN : 9781119695141

Résumé :

Fundamentals of Microelectronics, 3rd Edition, is a comprehensive introduction to the design and analysis of electrical circuits, enabling students to develop the practical skills and engineering intuition necessary to succeed in their future careers. Through an innovative analysis by inspection framework, students learn to deconstruct complex problems into familiar components and reach solutions using basic principles. A step-by-step synthesis approach to microelectronics demonstrates the role of each device in a circuit while helping students build design-oriented mindsets.

The revised third edition covers basic semiconductor physics, diode models and circuits, bipolar transistors and amplifiers, oscillators, frequency response, and more. In-depth chapters feature illustrative examples and numerous problems of varying levels of difficulty, including design problems that challenge students to select the bias and component values to satisfy particular requirements. The text contains a wealth of pedagogical tools, such as application sidebars, chapter summaries, self-tests with answers, and Multisim and SPICE software simulation problems. Now available in enhanced ePub format, Fundamentals of Microelectronics is ideal for single- and two-semester courses in the subject.

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Biographie:

1 Introduction To Microelectronics 1

1.1 Electronics Versus Microelectronics 1

1.2 Examples of Electronic Systems 2

1.2.1 Cellular Telephone 2

1.2.2 Digital Camera 5

1.2.3 Analog Versus Digital 7

1.3 Basic Concepts 8

1.3.1 Analog and Digital Signals 8

1.3.2 Analog Circuits 10

1.3.3 Digital Circuits 11

1.3.4 Basic Circuit Theorems 12

1.4 Chapter Summary 20

2 Basic Physics Of Semiconductors 21

2.1 Semiconductor Materials and Their Properties 22

2.1.1 Charge Carriers in Solids 22

2.1.2 Modification of Carrier Densities 25

2.1.3 Transport of Carriers 28

2.2 pn Junction 35

2.2.1 pn Junction in Equilibrium 36

2.2.2 pn Junction Under Reverse Bias 41

2.2.3 pn Junction Under Forward Bias 46

2.2.4 I/V Characteristics 49

2.3 Reverse Breakdown 54

2.3.1 Zener Breakdown 55

2.3.2 Avalanche Breakdown 55

2.4 Chapter Summary 56

Problems 57

SPICE Problems 60

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3 Diode Models and Circuits 61

3.1 Ideal Diode 62

3.1.1 Initial Thoughts 62

3.1.2 Ideal Diode 63

3.1.3 Application Examples 67

3.2 pn Junction as a Diode 72

3.3 Additional Examples 74

3.4 Large-Signal and Small-Signal Operation 80

3.5 Applications of Diodes 89

3.5.1 Half-Wave and Full-Wave Rectifiers 89

3.5.2 Voltage Regulation 100

3.5.3 Limiting Circuits 103

3.5.4 Voltage Doublers 106

3.5.5 Diodes as Level Shifters and Switches 112

3.6 Chapter Summary 114

Problems 115

SPICE Problems 122

4 Physics of Bipolar Transistors 124

4.1 General Considerations 125

4.2 Structure of Bipolar Transistor 126

4.3 Operation of Bipolar Transistor in Active Mode 127

4.3.1 Collector Current 129

4.3.2 Base and Emitter Currents 133

4.4 Bipolar Transistor Models and Characteristics 135

4.4.1 Large-Signal Model 135

4.4.2 I/V Characteristics 137

4.4.3 Concept of Transconductance 139

4.4.4 Small-Signal Model 141

4.4.5 Early Effect 145

4.5 Operation of Bipolar Transistor in Saturation Mode 152

4.6 The PNP Transistor 155

4.6.1 Structure and Operation 155

4.6.2 Large-Signal Model 156

4.6.3 Small-Signal Model 159

4.7 Chapter Summary 162

Problems 163

SPICE Problems 170

5 Bipolar Amplifiers 172

5.1 General Considerations 173

5.1.1 Input and Output Impedances 173

5.1.2 Biasing 178

5.1.3 DC and Small-Signal Analysis 178

5.2 Operating Point Analysis and Design 180

5.2.1 Simple Biasing 181

5.2.2 Resistive Divider Biasing 183

5.2.3 Biasing with Emitter Degeneration 186

5.2.4 Self-Biased Stage 190

5.2.5 Biasing of PNP Transistors 192

5.3 Bipolar Amplifier Topologies 196

5.3.1 Common-Emitter Topology 197

5.3.2 Common-Base Topology 224

5.3.3 Emitter Follower 238

5.4 Summary and Additional Examples 246

5.5 Chapter Summary 253

Problems 253

SPICE Problems 267

6 Physics of Mos Transistors 269

6.1 Structure of MOSFET 270

6.2 Operation of MOSFET 272

6.2.1 Qualitative Analysis 272

6.2.2 Derivation of I-V Characteristics 279

6.2.3 Channel-Length Modulation 288

6.2.4 MOS Transconductance 290

6.2.5 Velocity Saturation 292

6.2.6 Other Second-Order Effects 292

6.3 MOS Device Models 293

6.3.1 Large-Signal Model 293

6.3.2 Small-Signal Model 295

6.4 PMOS Transistor 296

6.5 CMOS Technology 299

6.6 Comparison of Bipolar and M...

Sommaire:
Behzad Razavi received the B.Sc. degree in electrical engineering from Sharif University of Technology in 1985, and the M.Sc. and Ph.D. degrees in electrical engineering from Stanford University in 1988 and 1992, respectively. He was with AT&T Bell Laboratories and subsequently Hewlett-Packard Laboratories until 1996. He was also an Adjunct Professor at Princeton University from 1992 to 1994. Since September 1996, Dr. Razavi has been an Associate Professor, and subsequently Professor, of the Electrical Engineering Department at UCLA. He was the Chair of the Integrated Circuits and Systems field of study, and served as Chair of the Department's Annual Research Review for two consecutive years.
Prof. Razavi is a member of the Technical Program Committees of Symposium on VLSI Circuits and the International Solid-State Circuits Conference (ISSCC), in which he is the chair of the Analog Subcommittee. He has served as Guest Editor and Associate Editor of the IEEE Journal of Solid-State Circuits, IEEE Transactions on Circuits and Systems, and International Journal of High Speed Electronics.
Professor Razavi's current research includes wireless transceivers, frequency synthesizers, phase-locking and clock recovery for high-speed data communications, and data converters....