High-k Gate Dielectric Materials -

. .

Résumé :
1. Moore's Law: In 21st Century? 2. SiO2 Based MOS Devices: Leakage and Limitations? 3. High-? Dielectric Materials: Structural Properties and Selection? 4. Selection of High-? Dielectric Materials? 5. Tunneling Current Density and Tunnel Resistivity: Application to High-? Material HfO2? 6. Analysis of Interface Charge Density: Application to High-? Material Tantalum Pentoxide? 7. High-? Material Processing in CMOS VLSI Technology? 8. Tunnel FET: Working, Structure, and Modeling? 9. Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications?...

Biographie:

Niladri Pratap Maity, PhD, is an Associate Professor in the Department of Electronics and Communication Engineering at Mizoram University, India. He is the author of more than 110 journal articles and conference papers and the recipient of several best/excellent paper awards. He was a Visiting Scientist at the Department of Science and Technology, Government of India. His research interests include VLSI design, MOS device modeling, and MEMS.

Reshmi Maity, PhD, is an Assistant Professor in the Department of Electronics and Communication Engineering, Mizoram University, Aizawl, India. Prior to that, she was an Assistant Professor at the JIS College of Engineering (West Bengal University of Technology) at Kolkata, India. She is the author of more than 80 refereed publications. Her research interests include VLSI design, nanoelectronics, and MEMS.

Srimanta Baishya, PhD, is a Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar, India. Before that, he was an Assistant Professor in the Department of Electronics and Telecommunication Engineering of the same college. His research interests cover semiconductor devices and circuits, MOS transistor modeling, and MEMSbased energy harvesting. He has published over 60 papers in peer-reviewed journals.