Copper Interconnect Technology - Gupta, Tapan

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Résumé :
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.

Biographie:
Dr. Tapan Gupta has a Ph. D degree and a M.S degree in solid state physics, with four years undergraduate physics (Hons), mathematics, chemistry, and biology. His postdoctoral training was on polymers chemistry and its applications in CD technology and related devices, such as integrated circuits. He was with the Research and Development department of the Zenith Radio Corp. in Chicago, IL and did research on integrated circuits and related materials (photoresists and metal silicon alloys). His academic qualifications, together with his experience, enable him to teach courses on VLSI and thick thin film hybrid circuits to graduate students at Tufts University, Medford, MA as an Analog Devices Career Development Professor. He has also worked as a consultant at the SIPEX Corporation, where he developed an alloy of silicon and chromium called Sichrome that is currently being used in MOSFET technology. Recently, Dr. Gupta has been engaged in research within the field of nuclear medicine, funded by the NIH, DOD, NSF, and NIST. He has 79 peer reviewed publications in J. Appl. Phys, Phys. Rev., IEEE Trans on Nuclr. Sci, IEEE Trans. On Comp. Hybrids, and Manuf. Technol., J. Mater. Sci., and Euro. J. Poly. Sci. He has 22 years of teaching and research experience at various universities and industries....

Sommaire:
Dielectric Materials.- Diffusion and Barrier Layers.- Pattern Generation.- Deposition Technologies of Materials for Cu-Interconnects.- The Copper Damascene Process and Chemical Mechanical Polishing.- Conduction and Electromigration.- Routing and Reliability.