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Présentation The Mos System de Olof Engström Format Relié
- Livre
Résumé :
A detailed, up-to-date guide to modern MOS transistors, describing key tools, cutting-edge models, novel phenomena and current challenges.
Biographie:
Olof Engstr?m is Professor Emeritus of Microtechnology and Nanoscience, Chalmers University of Technology, G?teborg, Sweden, having formerly held positions in industrial high-power MOS devices and sensors. His research focuses on semiconductor quantum structures and interfaces. He is a member of the Royal Swedish Academy of Engineering Sciences.
Sommaire:
1. Introduction; 2. Basic properties of the MOS system; 3. Basic properties of the gate stack; 4. Electron states at MOS interfaces; 5. Carrier capture at bulk oxide traps; 6. Electrical characterization by Fermi-probe technique; 7. Electrical characterization by thermal action; 8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy; 9. Electron spin resonance; 10. MOS systems with silicon dioxide dielectrics; 11. MOS systems with high-k dielectrics; 12. Gate metals and effective work function; 13. Transmission probabilities and current leakage in gate oxides; 14. MOS systems on high-mobility channel materials.