Ultra-Fast Silicon Bipolar Technology -

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Sommaire:
1. History, Present Trends, and Scaling of Silicon Bipolar Technology.- 1.1 Introduction.- 1.2 Polysilicon Emitter Contact.- 1.3 Self-alignment with Polysilicon Layers.- 1.4 Scaling Problems.- 1.5 Heterojunction Transistors.- 1.6 Topical Modelling Problems.- 1.7 Demonstration Circuits.- 1.8 Summary and Prospects.- References.- 2. Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors.- 2.1 Background.- 2.2 Limitations of the Modern Self-Aligned Transistors.- 2.3 BSA Technology.- 2.4 Summary.- References.- 3. Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors.- 3.1 Polysilicon Emitters.- 3.2 Base Charge Control.- 3.3 Transit Time Considerations.- 3.4 Conclusion.- References.- 4. Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects.- 4.1 Background.- 4.2 Process Technologies and Device Structures (First Generation).- 4.3 Process Technologies and Device Structures (Second Generation).- 4.4 Benefits and Device Performance.- 4.5 Application to Practical Devices.- 4.6 Problems and Limiting Aspects.- 4.7 Conclusion.- References.- 5. A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI.- 5.1 Background.- 5.2 Gate-Speed Simulation.- 5.3 Process and Transistor Design.- 5.4 Gate Speed and Prescaler IC.- 5.5 VSC Masterslice.- 5.6 Conclusion.- References.- 6. Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar Transistors.- 6.1 Background.- 6.2 SICOS Device Structure.- 6.3 Fabrication Process.- 6.4 Electrical Characteristics.- 6.5 Advanced Process Technology and Electrical Results for High-Speed SICOS Transistors.- 6.6 Conclusions.- References.- 7. Trends in Heterojunction Silicon Bipolar Transistors.- 7.1 Background.- 7.2 Polysilicon Emitter Bipolar Transistors.- 7.3 Epitaxial Emitter Bipolar Transistors.- 7.4 Heterojunction Bipolar Transistors.- 7.5 Conclusions.- References.- 8. Molecular Beam Epitaxy of Silicon-Based Bipolar Structures.- 8.1 Strengths of Si-MBE.- 8.2 Silicon Monolithic Millimeter Wave Integrated Circuits.- 8.3 Si/SiGe-Heterojunction Bipolar Transistors.- 8.4 Conclusions.- References.