Point Defects in Semiconductors II - Bourgoin, J.

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Sommaire:
1. Introduction.- 2. Lattice Distortion and the Jahn-Teller Effect.- 2.1 The Electron-Phonon Interaction.- 2.2 Symmetry Considerations: The Stable Atomic Configurations.- 2.3 Coupled Electronic and Nuclear Motion: Vibronic States - Static and Dynamic Jahn-Teller Limits.- 2.4 The Vacancy in Silicon.- 3. Electron Paramagnetic Resonance.- 3.1 The Hamiltonian.- 3.2 Electronic Zeeman Interaction.- 3.3 Spin Orbit Coubling.- 3.4 Hyperfine Interaction.- 3.5 Nuclear Zeeman Interaction - Double Resonance.- 3.6 Spin-Spin Interaction. Fine Structure.- 3.7 EPR of Impurities and Vacancy - Impurity Pairs in Silicon.- 3.8 The Vacancy in Silicon.- 4. Optical Properties.- 4.1 Transition Probability.- 4.2 The Configuration Coordinate Diagram.- 4.3 Optical Line Shape and the Electron-Lattice Interaction.- 4.4 Optical Cross Section.- 4.5 An Example. The GR Absorption Band in Diamond.- 5. Electrical Properties.- 5.1 Carrier Distribution Between Bands and Defect Levels.- 5.2 Conduction in Case of Defect Interaction.- 5.3 Carrier Scattering.- 6. Carrier Emission and Recombination.- 6.1 Emission and Capture Rates.- 6.2 Experimental Observation of Emission Rates.- 6.3 Nonradiative Recombination Processes.- 6.4 Experimental Determination of Ionization Energies, Entropies and Cross Sections.- 6.5 Influence of the Electric Field on Emission Rates.- 7. Other Methods of Detection.- 7.1 Photoexcitation.- 7.2 Optical Detection of Paramagnetic Resonance.- 7.3 Direct Detection of Phonons.- 8. Defect Production by Irradiation.- 8.1 Interaction of Radiation with Solids.- 8.2 Defect Production.- 8.3 Defect Nature and Spatial Distribution.- 8.4 Experimental Determination of a Threshold Energy.- 8.5 Subthreshold Effects.- 9. Defect Annealing.- 9.1 Annealing Kinetics.- 9.2 Determination of the AnnealingParameters.- 9.3 Annealing of Defects Induced by Electron Irradiation.- References.