Development and Packaging of Microsystems Using Foundry Services - Jeffrey T Butler

. .

Résumé :
Micro-electro-mechanical systems (MEMS) is a relatively new and rapidly growing field of research. Several advances to the MEMS and microsystem state of the art were achieved through the design and characterization of novel MEMS devices and packaging, which are compatible with CMOS microelectronics. Empirical and theoretical models of polysilicon thermal actuators were developed to understand and simulate the behavior of thermal actuators. These models can be implemented in microelectronic circuit simulators such as SPICE and allow the simultaneous simulation of thermally actuated MEMS and microelectronics. The most extensive investigation of the Multi-User MEMS Processes (MUMPs) polysilicon resistivity was also performed. The first published value for the thermal coefficient of resistivity (TCR) of the MUMPs Poly 1 layer was determined as 1.25 x 10-3 K-1. In addition, the sheet resistance of all the MUMPs polysilicon layers was found to be dependent on the linewidth due to the presence or absence of lateral phosphorus diffusion.

Sommaire:

Micro-electro-mechanical systems (MEMS) is a relatively new and rapidly growing field of research. Several advances to the MEMS and microsystem state of the art were achieved through the design and characterization of novel MEMS devices and packaging, which are compatible with CMOS microelectronics. Empirical and theoretical models of polysilicon thermal actuators were developed to understand and simulate the behavior of thermal actuators. These models can be implemented in microelectronic circuit simulators such as SPICE and allow the simultaneous simulation of thermally actuated MEMS and microelectronics. The most extensive investigation of the Multi-User MEMS Processes (MUMPs) polysilicon resistivity was also performed. The first published value for the thermal coefficient of resistivity (TCR) of the MUMPs Poly 1 layer was determined as 1.25 x 10-3 K-1. In addition, the sheet resistance of all the MUMPs polysilicon layers was found to be dependent on the linewidth due to the presence or absence of lateral phosphorus diffusion.

This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.

This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.

As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.