Band Structure Engineering in Semiconductor Microstructures -

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Résumé :
Proceedings of a NATO ARW held in Il Ciocco, Italy, April 10-15, 1988

Sommaire:
Electronic Structure, Band Offsets and Stability.- Comments on Can band offsets be modified controllably?.- The pressure dependent band offset in a type II superlattice, a test for band line-up theories.- Electronic properties of semiconductor interfaces: the control of interface barriers.- Polar/polar, covalent/covalent and covalent/polar semiconductor superlattices.- Band offsets at semiconductor heterojunctions: bulk or interface properties?.- The physics of Hg-based heterostructures.- Valence band discontinuities in HgTe-CdTe-ZnTe heterojunction systems.- Exact envelope function equations for microstructures and the particle in a box model.- A method for calculating electronic structure of semiconductor superlattices: perturbation.- The effects of ordering in ternary semiconductor alloys: electronic and structural properties.- Ab-initio molecular dynamics studies of microclusters.- Transport Properties.- Quantum interference in semiconductor devices.- A review of developments in resonant tunnelling.- Observation of ballistic holes.- Quantum transport theory of resonant tunnelling devices.- Hot electron effects in microstructures.- Models for scattering and vertical transport in microstructures and superlattices.- Electron beam source molecular beam epitaxy of AlxGa1?x As graded band gap device structures.- Future trends in quantum semiconductor devices.- Optical Properties.- Novel optical properties of InGaAs-InP quantum wells.- Time resolved spectroscopy of GaAs/AlGaAs quantum well structures.- Recombination mechanisms in a type II GaAs/AlGaAs superlattice.- Interface recombination in GaAs-GaA1As quantum wells.- The interface as a design tool for modelling of optical and electronic properties of quantum well devices.- Characterization and design ofsemiconductor lasers using strain.- Photoreflectance and photoluminescence of strained InxGa1?x As/GaAs single quantum wells.- Excitons in quantum well structures.- Fourier determination of the hole wavefunctions in p-type modulation doped quantum wells by resonant Raman scattering.- Optical properties of superlattices.- Ab-initio calculated optical properties of [001] (GaAs)n - (A1As)n superlattices.- Effect of a parallel magnetic field on the hole levels in semiconductor superlattices.- Profit from heterostructure engineering.- Participants.