Compact Transistor Modelling for Circuit Design - Graaff, Henk C. De

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Résumé :
This book describes analytical compact transistor models that can be used in circuit simulation programs like SPICE. It provides the reader with a thorough knowledge of many aspects of compact models. The book starts with the necessary device physics: Boltzmann transport equation, continuity equation, Poisson equation and physical modelling of mobility, recombination, bandgap narrowing, avalanche multiplication and noise. Then a systematic treatment of the analytical formulas that describe the device behaviour in d.c., a.c. and transient situations is given for both bipolar and MOST devices. The book contains complete sets of model equations for various models, including some new ones, and special attention is paid to the numerical problems of analytical continuity. Separate chapters are devoted to parameter determination, the parameter temperature dependence as well as their relation to process variables, the statistical correlations between parameters, the scaling rules for submicron devices, the side wall effects and the parasitics. The book thus contains all the relevant aspects of compact transistor modelling for integrated circuit design and serves as a state-of-the-art description in compact modelling.

Sommaire:
1 Introduction.- 1.1 Compact Models.- 1.2 Compact Models and Simulation Programs.- 1.3 Subjects Treated in This Book.- References.- 2 Some Basic Semiconductor Physics.- 2.1 Quantum-Mechanical Concepts.- 2.2 Distribution Function and Carrier Concentration.- 2.3 The Boltzmann Transport Equation.- 2.4 Bandgap Narrowing.- 2.5 Mobility and Resistivity in Silicon.- 2.6 Recombination.- 2.7 Avalanche Multplication.- 2.8 Noise Sources.- References.- 3 Modelling of Bipolar Device Phenomena.- 3.1 Injection and Transport Models.- 3.2 The Quasi-Static Approximation and the Charge Control Principle.- 3.3 Collector Currents and Stored Charges.- 3.4 Base Currents.- 3.5 Depletion Charges and Capacitances.- 3.6 Early Effect.- 3.7 Quasi-Saturation, Base Widening and Kirk Effect.- 3.8 Avalanche Multiplication.- 3.9 Series Resistances.- 3.10 Time- and Frequency-Dependent Behaviour.- 3.11 Transit Time and Cut-Off Frequency fT.- 3.12 Noise Behaviour.- 3.13 Temperature Dependences.- References.- 4 Compact Models for Vertical Bipolar Transistors.- 4.1 Ebers-Moll-Type Models.- 4.2 Gummel-Poon-Type Models.- 4.3 The MEXTRAM Model.- 4.4 Short Review.- References.- 5 Lateral pnp Transistor Models.- 5.1 Model Definitions.- 5.2 Results.- 5.3 Shortcomings of Existing Models.- References.- 6 MOSFET Physics Relevant to Device Modelling.- 6.1 Formation of the Inversion Layer.- 6.2 The Ideal MOS Transistor Current.- 6.3 The Threshold Voltage.- 6.4 Carrier Mobility in Inversion Layers.- 6.5 Saturation Mode.- 6.6 Dynamic Operation.- 6.7 Intrinsic Parasitics.- References.- 7 Models for the Enhancement-Type MOSFET.- 7.1 Long-Channel Models.- 7.2 Small Transistor Models.- 7.3 Models for Analog Applications.- References.- 8 Models for the Depletion-Type MOSFET.- 8.1 Long-Channel Model.- 8.2 Short-Channel Model.-8.3 Charges and Charge Distribution.- References.- 9 Models for the JFET and the MESFET.- 9.1 The Drain Current of the Junction-Gate FET.- 9.2 The Drain Current of the MESFET.- 9.3 Charges and Capacitances.- References.- 10 Parameter Determination.- 10.1 General Optimization Method.- 10.2 Specific Bipolar Measurements.- 10.3 Example of Parameter Extraction for a Bipolar Transistor Model.- 10.4 Parameter Determination for MOSFETs.- 10.5 Specific MOSFET Measurements.- References.- 11 Process and Geometry Dependence, Optimization and Statistics of Parameters.- 11.1 Unity Parameters and Geometrical Scaling in Bipolar Modelling.- 11.2 Bipolar Process Blocks and Circuit Optimization.- 11.3 Geometry- and Process Dependence of MOSFET Parameters.- 11.4 Statistics: Definitions and Formulas.- 11.5 Bipolar Statistical Modelling.- 11.6 MOS Statistical Modelling.- References.