Elementary Semiconductor Device Physics - Amakawa, Shuhei

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Résumé :

Preface xiv

Symbol Index xix

Chapter 1 ? Introduction 1

1.1 WHAT ARE SEMICONDUCTOR DEVICES? 1

1.2 CLASSIFICATION OF SOLIDS 1

1.3 PROPERTIES OF SEMICONDUCTORS 6

1.3.1 Arrangement of Atoms 6

1.3.2 Intrinsic and Doped Semiconductors 7

1.3.3 Carriers in Intrinsic Semiconductors 7

1.3.4 Energy Band Formation 8

1.3.5 Properties of Intrinsic Semiconductors 11

1.3.6 Energy Band Diagrams 13

1.3.7 n-Type and p-Type Semiconductors 16

1.4 WHAT IS THE MOST ABUNDANT ARTIFACT ON EARTH? 23

1.5 SUMMARY 25

1.6 PROBLEMS 26

Chapter 2 ? Semiconductor Devices from a Circuit-Theoretic Standpoint 28

2.1 LINEAR CIRCUIT ELEMENTS 28

2.1.1 Linear Resistors 29

2.1.2 Linear Capacitors 29

2.1.3 Linear Inductors 32

2.2 NONLINEAR CIRCUIT ELEMENTS 32

2.2.1 Nonlinear Resistors 33

2.2.2 Nonlinear Capacitors and Inductors 36

2.3 TIME-INVARIANT AND TIME-VARYING CIRCUIT ELEMENTS 40

2.4 MULTITERMINAL ELEMENTS AND CONTROLLED SOURCES 41

2.5 TRANSISTORS 43

2.6 CIRCUIT-THEORETIC POSITIONING OF SEMICONDUCTOR DEVICES 46

2.7 SUMMARY 47

2.8 PROBLEMS 49

Chapter 3 ? Waves in Periodic Structures 50

3.1 ANALOGIES IN PHYSICS 50

3.1.1 Commonality of Mathematical Structures 50

3.1.2 Overview of the Chapter 52

3.2 PROPERTIES OF PERIODIC NETWORKS 55

3.2.1 Infinitely Long Ladder Networks 55

3.2.2 Infinitely Long LC Ladders 57

3.2.3 Lossless Transmission Lines 60

3.2.4 Periodic Networks with a Finite Number of Repetitions 66

3.2.5 Kronig-Penney Model 69

3.3 DISPERSION RELATION AND PHASE AND GROUP VELOCITIES 71

3.3.1 Dispersion Relation 71

3.3.2 Phase Velocity and Group Velocity 74

3.3.3 Calculation of the Dispersion Relation 76

3.4 DISPERSION RELATION AND PROPERTIES OF SEMICONDUCTORS 79

3.5 BRAGG REFLECTION 83

3.6 SUMMARY 85

3.7 PROBLEMS 85

Chapter 4 ? Physics of Semiconductors in Equilibrium 87

4.1 DENSITY OF STATES IN ENERGY BAND AND DISTRIBUTION FUNCTION 87

4.2 CARRIER DENSITIES OF NONDEGENERATE SEMICONDUCTORS 91

4.2.1 Electron Density 91

4.2.2 Hole Density 93

4.2.3 Product of Hole and Electron Densities 94

4.2.4 Insulators 95

4.2.5 Fermi Level of Intrinsic Semiconductors 96

4.2.6 Carrier Density in Terms of Intrinsic Carrier Density 97

4.3 FERMI LEVEL OF DOPED SEMICONDUCTORS 98

4.3.1 Nondegenerately Doped Semiconductors 98

4.3.2 Degenerate Semiconductors 104

4.4 FERMI LEVEL AND CHEMICAL POTENTIAL 106

4.4.1 Properties of Chemical Potential 106

4.4.2 Chemical Potential in the Presence of an External Force 109

4.5 SUMMARY 112

4.6 PROBLEMS 112

Chapter 5 ? Carrier Dynamics in Semiconductors 115

5.1 EQUILIBRIUM AND NONEQUILIBRIUM STATES, STEADY AND NONSTEADY STATES 115

5.2 QUASI-FERMI LEVELS AND CARRIER DENSITIES 117

5.2.1 Quasi-Chemical Potential 117

5.2.2 Electron and Hole Quasi-Fermi Levels 119

5.2.3 Nonequilibrium Carrier Densities 123

5.2.4 Logarithmic Transform of Carrier Densities 125

5.2.5 General Form of Nondegenerate Carrier Density Expressions 128

5.3 QUASI-FERMI LEVELS AND CURRENT DENSITY 129

5.3.1 Carrier Flux Density and Current Density 129

5.3.2 Quasi-Fermi Level Gradient and Current Density 131

5.3.3 Drift and Diffusion of Carriers 132

5.4 ELECTRIC CONDUCTION DUE TO ELECTRIC FIELD 133

5.4.1 Drift of Carriers 133

5.4.2 Relationship between Mobility and Conductivity 138

5.5 ELECTRIC CONDUCTION DUE TO CARRIER DIFFUSION 139

5.5.1 Diffusion Current 140

5.5.2 Einstein's Relation 141

5.6 CA...

Biographie:

Kazuya Masu is President of Tokyo Institute of Technology (Tokyo Tech), a position he has held since 2018. He earned his bachelor's, master's, and doctoral degrees in engineering from Tokyo Tech in 1977, 1979, and 1982 respectively. He is a member of IEEE.

Shuhei Amakawa is Professor at Hiroshima University. He received his B.Eng., M.Eng., and Ph.D. degrees in engineering from the University of Tokyo, Tokyo in 1995, 1997, and 2001, respectively, and his M.Phil. degree in physics from the University of Cambridge in 2000. He served/serves as a Committee Member for the International Solid-State Circuits Conference and the International Microwave Symposium and is a member of IEEE.