Gan Power Devices for Efficient Power Conversion - Alejandro Pozo

. .

Résumé :

Foreword xi

Acknowledgments xiii

1 GaN Technology Overview 1

1.1 Silicon Power MOSFETs: 1976-2010 1

1.2 The GaN Journey Begins 2

1.3 GaN and SiC Compared with Silicon 2

1.4 The Basic GaN Transistor Structure 6

1.5 Building a GaN HEMT Transistor 11

1.6 GaN Integrated Circuits 15

1.7 Summary 21

References 22

2 GaN Transistor Electrical Characteristics 25

2.1 Introduction 25

2.2 Device Ratings 25

2.3 Gate Voltage 30

2.4 On-Resistance (R DS(on)) 31

2.5 Threshold Voltage 34

2.6 Capacitance and Charge 35

2.7 Reverse Conduction 38

2.8 Thermal Characteristics 40

2.9 Summary 42

References 42

3 Driving GaN Transistors 45

3.1 Introduction 45

3.2 Gate Drive Voltage 47

3.3 Gate Drive Resistance 48

3.4 dv/dt Considerations 50

3.5 di/dt Considerations 53

3.6 Bootstrapping and Floating Supplies 56

3.7 Transient Immunity 59

3.8 Gate Drivers and Controllers for Enhancement-Mode GaN Transistors 61

3.9 Cascode, Direct Drive, and Higher-Voltage Configurations 61

3.10 Using GaN Transistors with Drivers or Controllers Designed for Si MOSFETs 67

3.11 Driving GaN ICs 68

3.12 Summary 69

References 70

4 Layout Considerations for GaN Transistor Circuits 75

4.1 Introduction 75

4.2 Origin of Parasitic Inductance 76

4.3 Minimizing Common-Source Inductance 77

4.4 Minimizing Power-Loop Inductance in a Half-Bridge Configuration 79

4.5 Paralleling GaN Transistors 85

4.6 Summary 93

References 93

5 GaN Reliability 95

5.1 Introduction 95

5.2 Getting Started with GaN Reliability 95

5.3 Determining Wear-Out Mechanisms Using Test-to-Fail Methodology 95

5.4 Using Test-to-Fail Results to Predict Device Lifetime in a System 98

5.5 Wear-Out Mechanisms 99

5.6 Mission-Specific Reliability Predictions 133

5.7 Summary 150

References 150

6 Thermal Management of GaN Devices 155

6.1 Introduction 155

6.2 Thermal Equivalent Circuits 155

6.3 Cooling Methods 160

6.4 System-Level Thermal Overview: Single FET 163

6.5 System-Level Thermal Analysis: Multiple FETs 176

6.6 Experimental Thermal Examples 182

6.7 Summary 191

References 191

7 Hard-Switching Topologies 195

7.1 Introduction 195

7.2 Hard-Switching Loss Analysis 196

7.3 External Factors Impacting Hard-Switching Losses 217

7.4 Frequency Impact on Magnetics 223

7.5 Buck Converter Example 224

7.6 Summary 245

References 245

8 Resonant and Soft-Switching Converters 249

8.1 Introduction 249

8.2 Resonant and Soft-Switching Techniques 249

8.3 Key Device Parameters for Resonant and Soft-Switching Applications 254

8.4 High-Frequency Resonant Bus Converter Example 261

8.5 Summary 269

References 271

9 RF Performance 273

9.1 Introduction 273

9.2 Differences Between RF and Switching Transistors 275

9.3 RF Basics 276

9.4 RF Transistor Metrics 277

9.5 Amplifier Design Using Small-Signal s-Parameters 284

9.6 Amplifier Design Example 285

9.7 Summary 292

References 292

10 DC-DC Power Conversion 295

10.1 Introduction 295

10.2 DC-DC Converter Examples 295

10.3 Summary 317

References 318

11 Multilevel Converters 321

11.1 Introduction 321

11.2 Benefits of Multilevel Converters 321

11.3 Experimental Examples 338

11.4 Summary ...

Biographie:

Alex Lidow is the CEO and Co-founder of Efficient Power Conversion.

Michael de Rooij is Vice President of Applications Engineering at Efficient Power Conversion.

John Glaser is Director of Applications at Efficient Power Conversion.

Alejandro Pozo is a Senior Applications Engineer at Efficient Power Conversion.

Shengke Zhang is Vice President of Product Reliability at Efficient Power Conversion.

Marco Palma is a Senior FAE Manager based in Europe.

David Reusch is a Systems Engineer, Kilby Labs, Texas Instruments, USA.

Johan Strydom is Advanced Development Manager, Kilby Labs, Texas Instruments, USA....

Sommaire:

An up-to-date and concise review of GaN transistor design and applications

In the newly revised fourth edition of GaN Power Devices for Efficient Power Conversion, a team of distinguished researchers and practicing engineers deliver a concise and effective new guide to designing small, energy-efficient, and inexpensive products with GaN transistors. This new edition covers all relevant new GaN technology advancements, allowing students and practicing engineers to get, and stay ahead of, the curve with GaN device and circuit technology.

You'll explore applications including DC to DC converters, solar inverters, motor drive controllers, satellite electronics, and LiDAR devices. The 4th edition offers critical updates for space applications, vertical GaN, and driving transistors and integrated circuits. New chapters on reliability testing advancements, device wear out mechanisms, thermal management, and the latest developments in monolithic integration round out the book.

Readers will also find:

• The latest updates on significant technology improvements, like integrated circuits, reliability studies, and new applications
• Comprehensive explorations of integrated circuit construction, characteristics, reliability results, and applications
• Practical discussions of specific circuit designs, layout, and thermal dissipation when designing power conversion systems
• Chapters written by practicing expert leaders in the power semiconductor field and industry pioneers

Perfect for practicing power conversion engineers, GaN Power Devices for Efficient Power Conversion will also benefit electrical engineering students and device scientists in the field of power electronics....