Analysis and Design of Analog Integrated Circuits - Gray, Paul R.

Résumé :

Chapter 1 Models for Integrated-Circuit Active Devices 1

1.1 Introduction 1

1.2 Depletion Region of a pn Junction 1

1.2.1 Depletion-Region Capacitance 5

1.2.2 Junction Breakdown 7

1.3 Large-Signal Behavior of Bipolar Transistors 9

1.3.1 Large-Signal Models in the Forward-Active Region 9

1.3.2 Effects of Collector Voltage on Large-Signal Characteristics in the Forward-Active Region 14

1.3.3 Saturation and Inverse-Active Regions 16

1.3.4 Transistor Breakdown Voltages 21

1.3.5 Dependence of Transistor Current Gain ? F on Operating Conditions 24

1.4 Small-Signal Models of Bipolar Transistors 26

1.4.1 Transconductance 26

1.4.2 Base-Charging Capacitance 28

1.4.3 Input Resistance 29

1.4.4 Output Resistance 30

1.4.5 Basic Small-Signal Model of the Bipolar Transistor 30

1.4.6 Collector-Base Resistance 31

1.4.7 Parasitic Elements in the Small-Signal Model 31

1.4.8 Specification of Transistor Frequency Response 35

1.5 Large-Signal Behavior of Metal-Oxide-Semiconductor Field-Effect Transistors 39

1.5.1 Transfer Characteristics of MOS Devices 39

1.5.2 Comparison of Operating Regions of Bipolar and MOS Transistors 46

1.5.3 Decomposition of Gate-Source Voltage 48

1.5.4 Threshold Temperature Dependence 48

1.5.5 MOS Device Voltage Limitations 49

1.6 Small-Signal Models of MOS Transistors 50

1.6.1 Transconductance 51

1.6.2 Intrinsic Gate-Source and Gate-Drain Capacitance 52

1.6.3 Input Resistance 53

1.6.4 Output Resistance 53

1.6.5 Basic Small-Signal Model of the MOS Transistor 53

1.6.6 Body Transconductance 54

1.6.7 Parasitic Elements in the Small-Signal Model 55

1.6.8 MOS Transistor Frequency Response 57

1.7 Short-Channel Effects in MOS Transistors 60

1.7.1 Velocity Saturation from the Horizontal Field 60

1.7.2 Transconductance and Transition Frequency 64

1.7.3 Mobility Degradation from the Vertical Field 66

1.8 Weak Inversion in MOS Transistors 67

1.8.1 Drain Current in Weak Inversion 67

1.8.2 Transconductance and Transition Frequency in Weak Inversion 70

1.9 Substrate Current Flow in MOS Transistors 73

A.1.1 Summary of Active-Device Parameters 74

Problems 76

References 78

General References 79

Chapter 2 Bipolar, MOS, and BiCMOS Integrated-Circuit Technology 81

2.1 Introduction 81

2.2 Basic Processes in Integrated-Circuit Fabrication 82

2.2.1 Electrical Resistivity of Silicon 82

2.2.2 Solid-State Diffusion 83

2.2.3 Electrical Properties of Diffused Layers 85

2.2.4 Photolithography 87

2.2.5 Epitaxial Growth 89

2.2.6 Ion Implantation 90

2.2.7 Local Oxidation 90

2.2.8 Polysilicon Deposition 90

2.3 High-Voltage Bipolar Integrated-Circuit Fabrication 91

2.4 Advanced Bipolar Integrated-Circuit Fabrication 95

2.5 Active Devices in Bipolar Analog Integrated Circuits 98

2.5.1 Integrated-Circuit npn Transistors 99

2.5.2 Integrated-Circuit pnp Transistors 111

2.6 Passive Components in Bipolar Integrated Circuits 118

2.6.1 Diffused Resistors 119

2.6.2 Epitaxial and Epitaxial-Pinch Resistors 122

2.6.3 Integrated-Circuit Capacitors 124

2.6.4 Zener Diodes 124

2.6.5 Junction Diodes 125

2.7 Modifications to the Basic Bipolar Process 127

2.7.1 Dielectric Isolation 127

2.7.2 Compatible Processing for High-Performance Active Devices 128

2.7.3 High-Performance Passive Components 131

2.8 MOS Integrated-Circuit Fabrication 131

2.9 Active Devic...

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