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Differentiated Layout Styles for MOSFETs - Galembeck, Egon Henrique Salerno

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        Présentation Differentiated Layout Styles For Mosfets de Galembeck, Egon Henrique Salerno Format Relié

         - Livre Littérature Générale

        Livre Littérature Générale - Galembeck, Egon Henrique Salerno - 30/04/2023 - Relié - Langue : Anglais

        . .

      • Auteur(s) : Galembeck, Egon Henrique Salerno - Gimenez, Salvador Pinillos
      • Editeur : Springer International Publishing
      • Langue : Anglais
      • Parution : 30/04/2023
      • Format : Moyen, de 350g à 1kg
      • Nombre de pages : 224
      • Expédition : 506
      • Dimensions : 24.1 x 16.0 x 1.8
      • ISBN : 9783031290855



      • Résumé :
        This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.

        Biographie:
        Salvador Pinillos Gimenez is a Full Professor at the Department of Electrical Engineering, Centro Universit?rio FEI (FEI-SP) and MTG2i Solutions Co., S?o Paulo, Brazil. In 1984, he received his B.Sc. degree in Electronic Engineering from UMC, S?o Paulo, Brazil. He obtained the M.Sc. degree in Electrical Engineering from Microelectronic Lab. of S?o Paulo University (LME/EPUSP) in 1990. In October 2004, he obtained the Ph.D. degree in Microelectronics. His general interests are in new MOSFETs, FinFETs, power devices, design and optimization of analog and radiofrequency CMOS ICs by using computational tools based on Artificial Inteligence (iMTGSPICE) and parallel digital processing. Egon Henrique Salerno Galembeck is a researcher at MTG2i Solutions Co. in the research lines of design and optimization of analog and radio frequency CMOS ICs, electrical characterization of transistors in harsh environment and three-dimensional numerical simulation of MOS devices. In2013, he received the electrical engineering degree from Centro Universit?rio FEI, S?o Paulo, Brazil. He obtained the M. Sc. degree in Electrical Engineering in the area of ??Integrated Electronic Devices from Centro Universit?rio FEI, in September 2015. He received his Ph.D. degree in Electrical Engineering in the area of Nanoelectronics and Integrated Devices from Centro Universit?rio FEI, S?o Paulo, Brazil, in 2022....

        Sommaire:
        This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area....

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